CURRENT REQUIREMENTS

• 85mA (exclusive of load)

OUTPUT TRANSISTORS

• (1) NPN and (1) PNP Output transistor:

• NPN: Sink up to 150mA
• PNP: Source up to 150mA
• Momentary short circuit protected
• Outputs protected from pulsing during power up
• Light/dark switch determines Output Status:
    Light = Light ON operate
    Dark = Dark ON operate

RESPONSE TIME

• Minimum duration of input event
• Light state response = 50 microseconds
• Dark state response = 140 microseconds
• Leading edge Variation less than 20 microseconds

HYSTERESIS

• Less than 400 millivolts for   maximum sensitivity and resolution

LED LIGHT SOURCE

• Pulse modulation rate 45 KHZ
• Choice of color:
  A. Infrared = 880nm
  B. Red = 660nm
  C. White = Broadband Color Spectrum
  D. Blue = 480nm

LIGHT IMMUNITY

• Responds to sensor's pulsed   modulated light source
• Immune to most ambient light

OFFSET/EDR® ADJUSTMENT

• Sets initial level on CONTRAST   INDICATOR in relation to mid-scale switch point of 5 – functions as   sensitivity adjustment
• Controls Enhanced Dynamic Range circuit (EDR®) which functions to avoid   saturation

INDICATORS

• OUTPUT INDICATOR - Red LED   illuminates and the NPN or PNP outputs switch to the opposite state when   returned light level exceeds 5 on the CONTRAST INDICATOR
• EDR® INDICATOR - Intensity of GREEN LED provides indication of where in the   dynamic operating range the offset,EDR® adjustment has been set
• FULLY LIT: Operating near saturation
• OFF: Operating near maximum sensing range
• CONTRAST INDICATOR – Displays scaled reading of sensor's response to   contrasting light levels (light vs. dark) on a ten bar LED display

AMBIENT TEMPERATURE

• -40°C to 70°C (-40°F to 158°F)

RUGGED CONSTRUCTION

• Chemical resistant, high impact   polycarbonate housing
• Waterproof, NEMA 4X, 6P and IP67 enclosure ratings
• Epoxy encapsulated for mechanical strength